DF SCD Substrate Samples
Single-crystal diamond (SCD) substrate samples are available from DF in 5-unit order bundles including a handling fee for our significant overhead for small volumes.
- Thermal Conductivity: 2,200 W/m/K (isotropic; at room temperature)
- Breakdown Voltage: 4,200 Volts
- Dimensions: 18x18mm * 300µm (+/-25um)
- TTV: <25µm
- Carats: 1.7
Two surface finishes are standard:
1. DF Chip Bondable SCD Substrate: With a rougher surface bondable to semi chips with low-temperature low-pressure processes such as sintering or metallic thermo compression bonding;
2. DF Semi SCD Substrate: With a polished semiconductor grade surface for the development of transistors.
About Product
DF Semi SCD Substrate
- Use for all-diamond transistors
- Or bond to chips using Plasma Assisted Fusion Bonding or Surface Assisted Bonding
- Polished side Sa: <0.5nm (up to 0.2nm Ra)
Price per unit:
$
23
Place order
Samples generally ship within 48 hrs. Shipping & handling charges apply.
DF Chip Bondable SCD Substrate
- Bondable using metallic films using sintering and thermo compression
- Sa: <1µm
- Use to transform power electronics with exceptional thermal conductivity and a high dielectric breakdown voltage, allowing operation above 200°C
- Ideal for high-power applications, it suits power modules using Si IGBTs, SiC, or GaN
- Typical use cases are in automotive inverters, power generation, and renewable energy, where durability, power density, and performance are crucial
Price per unit:
$
18
Place order
Samples generally ship within 48 hrs. Shipping & handling charges apply.
Documents
Datasheet
Design resources
Application Notes